Taiwanese semiconductor company PANJIT International has introduced its latest series of automotive-grade 60 V N-channel MOSFETs, featuring Shielded Gate Trench (SGT) technology to support power devices for automobiles.
The series is engineered to deliver enhanced figure of merit (FOM), ultra-low RDS(ON) and minimized capacitance to enhance performance and energy efficiency in automotive electronic systems by reducing conduction and switching losses.
SGT MOSFETs are key medium-voltage MOSFETs that have an increased trench depth and charge-coupled structure that enable horizontal and vertical depletion, enhancing breakdown voltage and enabling higher performance at similar doping concentrations compared to traditional trench MOSFETs. SGT MOSFETs add a shielding electrode under the gate electrode, which is connected to the source electrode. This shields the gate and the drift region, reducing Miller capacitance and lowering switching losses. The design also reduces the critical electric field in the drift region, lowering the total gate charge (Qg, @RDS(on) 3 mΩ) by 57%.
PANJIT’s AEC-Q101 qualified, 60 V N-channel MOSFETs are available in a range of compact and efficient packages, including DFN3333-8L, DFN5060-8L, DFN5060B-8L, TO-252AA and TO-220AB-L. An operating junction temperature of up to 175° C provides optimal design flexibility for modern electronics.
Automotive applications for the series include advanced driver assistance systems (ADAS), body control unit (BCUs) cooling fans, infotainment and instrument displays, LED lighting, motor pumps, onboard chargers and sensors.
Source: PANJIT International
